20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

Summary

arXiv:2606.03677v1 Announce Type: new Abstract: Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing architectures relying on ferroelectric capacitive devices (FeCap). We integrate HfO2/ZrO2 ferroelectric nanolayers concurrently in the BEOL of CMOS and on SiO2/Si, achieving nanosecond multilevel switching with programming voltages below 5 V. Partial ferroelectric switching enhances FeCap endurance above 1011 cycles, leading to MemCapacitance (MC) states with non-destructive read-out and 10-year retention.