Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride
Semiconductors
Summary
arXiv:2607.07092v1 Announce Type: new Abstract: This work systematically unveils the nanoscale surface damage dynamics in gallium nitride by investigating the atomistic mechanisms of hillock formation. The results identify two distinct hillock morphologies dependent on electronic energy loss (Se) values. Bell-shaped hillocks form under 18.2 keV/nm Kr irradiation, whereas crater-rim hillocks with central holes emerge under 40.2 keV/nm Ta irradiation.
Why It Matters
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Key Facts
- SectorSemiconductors
- MarketTaiwan
- ImpactMedium (50/100)
- SignalFunding Research