Fracture energy of 6H-SiC at the microscale: effects of testing geometry and notch preparation
Semiconductors
Summary
arXiv:2606.03818v1 Announce Type: new Abstract: Micromechanical testing enables small-scale fracture energy measurements, but values depend strongly on geometry and specimen preparation. Here, the fracture energy of the single-crystal 6H-SiC {10-10} plane was measured using microscale double cantilever beam (DCB) and single cantilever beam (SCB) geometries. DCBs showed stable crack growth under displacement control and obtained 7.5 +- 0.3 J/m2.
Why It Matters
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Key Facts
- SectorSemiconductors
- Market—
- ImpactLow (42/100)
- SignalResearch